Modified ion-bombardment technqiue interconnects MOS circuit elements without affecting circuit parameters. Multilevel metalization involves: surface treatment prior to metalization; first metalization; metal pattern definition and photoresist removal; dielectric deposition; second metalization; and final dielectric deposition.


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    Title :

    Multilayer metalization of MOS IC's


    Contributors:

    Published in:

    Publication date :

    1980-06-01



    Type of media :

    Miscellaneous


    Type of material :

    No indication


    Language :

    English




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