Modified ion-bombardment technqiue interconnects MOS circuit elements without affecting circuit parameters. Multilevel metalization involves: surface treatment prior to metalization; first metalization; metal pattern definition and photoresist removal; dielectric deposition; second metalization; and final dielectric deposition.
Multilayer metalization of MOS IC's
NASA Tech Briefs ; 4 , 4
1980-06-01
Miscellaneous
No indication
English
NTRS | 1980
|Progress in MOSFET double-layer metalization
NTRS | 1980
|Tests on Double Layer Metalization
NTRS | 1983
|Metalization Patterns by Thermal Decomposition
NTRS | 1986
|NTRS | 1983
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