Increased reliability and simplified fabrication result from postassembly preencapsulation passivation process. Photonitride reaction chamber receives silane, ammonia, and mercury from mixing manifold to form passivating coating on IC's. Photonitride layer is barrier to moisture and penetration by mobile ions, and helps to protect IC devices subjected to severe mechanical handling or circuit repair procedures. Process is compatible with variety of wire-bonded lead frame assemblies. Advantages over plasma and sputtering deposition processes are low deposition temperature and zero stray radiation and ion levels.
Photonitride passivating coating for IC's
NASA Tech Briefs ; 5 , 2
1980-09-01
Miscellaneous
No indication
English
NTRS | 1983
|Automated ion implantation for IC's
NTRS | 1980
|British Library Online Contents | 1992
NTRS | 1978
|Multilayer metalization of MOS IC's
NTRS | 1980
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