Modified ion-bombardment technqiue interconnects MOS circuit elements without affecting circuit parameters. Multilevel metalization involves: surface treatment prior to metalization; first metalization; metal pattern definition and photoresist removal; dielectric deposition; second metalization; and final dielectric deposition.
Multilayer metalization of MOS IC's
NASA Tech Briefs ; 4 , 4
01.06.1980
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Englisch
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