LED chip bonding on Cu foil have been investigated. We found that with thicker Cu coating on the back side of LED chip, a better lighting efficiency will be obtained. Indium(In) chip bonding shows slightly better thermal dissipation than Sn chip bonding. Also, a new wafer bonding for producing GaN on Si substrate have been successfully demonstrated. This technique enables us to produce a high temperature bonding by using a low temperature process.


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    Title :

    Metallic wafer and chip bonding for LED packaging


    Contributors:
    Hsu, C.C. (author) / Wang, S.J. (author) / Liu, C.Y. (author)


    Publication date :

    2003-01-01


    Size :

    56034 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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