LED chip bonding on Cu foil have been investigated. We found that with thicker Cu coating on the back side of LED chip, a better lighting efficiency will be obtained. Indium(In) chip bonding shows slightly better thermal dissipation than Sn chip bonding. Also, a new wafer bonding for producing GaN on Si substrate have been successfully demonstrated. This technique enables us to produce a high temperature bonding by using a low temperature process.
Metallic wafer and chip bonding for LED packaging
01.01.2003
56034 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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