LED chip bonding on Cu foil have been investigated. We found that with thicker Cu coating on the back side of LED chip, a better lighting efficiency will be obtained. Indium(In) chip bonding shows slightly better thermal dissipation than Sn chip bonding. Also, a new wafer bonding for producing GaN on Si substrate have been successfully demonstrated. This technique enables us to produce a high temperature bonding by using a low temperature process.


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    Titel :

    Metallic wafer and chip bonding for LED packaging


    Beteiligte:
    Hsu, C.C. (Autor:in) / Wang, S.J. (Autor:in) / Liu, C.Y. (Autor:in)


    Erscheinungsdatum :

    01.01.2003


    Format / Umfang :

    56034 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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