Gain, loss and /spl alpha/-factor were measured in broad stripe 1.23 /spl mu/m InGaAs and 1.29 /spl mu/m InGaAsN single-QW lasers. Experiment shows that both differential gain with respect to current and /spl alpha/-factor tend to decrease in dilute-nitride devices compared with InGaAs-active lasers.


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    Titel :

    Linewidth-enhancement factors of InGaAs and InGaAsN single-quantum-well diode lasers


    Beteiligte:
    Shterengas, L. (Autor:in) / Jeng-Ya Yeh, (Autor:in) / Mawst, L.J. (Autor:in) / Tansu, N. (Autor:in) / Belenky, G. (Autor:in)


    Erscheinungsdatum :

    01.01.2004


    Format / Umfang :

    202649 byte



    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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