Gain, loss and /spl alpha/-factor were measured in broad stripe 1.23 /spl mu/m InGaAs and 1.29 /spl mu/m InGaAsN single-QW lasers. Experiment shows that both differential gain with respect to current and /spl alpha/-factor tend to decrease in dilute-nitride devices compared with InGaAs-active lasers.
Linewidth-enhancement factors of InGaAs and InGaAsN single-quantum-well diode lasers
Conference on Lasers and Electro-Optics, 2004. (CLEO). ; 1 ; 2 pp. vol.1
01.01.2004
202649 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
The effect of nitrogen in InGaAsN quantum well lasers
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