We compare the gain and radiative efficiency characteristics of an InGaAsN and InGaAs laser structures where the devices are identical except for the nitrogen content and emission wavelength.
The effect of nitrogen in InGaAsN quantum well lasers
Conference on Lasers and Electro-Optics, 2004. (CLEO). ; 1 ; 2 pp. vol.1
01.01.2004
164927 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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