We compare the gain and radiative efficiency characteristics of an InGaAsN and InGaAs laser structures where the devices are identical except for the nitrogen content and emission wavelength.


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    Titel :

    The effect of nitrogen in InGaAsN quantum well lasers


    Beteiligte:
    Palmer, D.J. (Autor:in) / Smowton, P.M. (Autor:in) / Blood, P. (Autor:in) / Jeng-Ya Yeh, (Autor:in) / Mawst, L.J. (Autor:in) / Tansu, N. (Autor:in)


    Erscheinungsdatum :

    01.01.2004


    Format / Umfang :

    164927 byte



    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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