This study demonstrated that the nitrogen content in the quantum well (QW) dramatically affects the temperature sensitivity of current injection efficiency and material gain parameter. The current injection efficiency of InGaAsN QW lasers with increasing N-content exhibits increasing temperature sensitivity, which could result from the reduction of the heavy hole confinement. Suppression of thermionic carrier leakage is crucial to realizing high-performance InGaAsN QW lasers with high N-content for emission wavelength beyond 1360-nm or even up to 1550-nm.


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    Titel :

    Temperature sensitivity of 1360 nm InGaAsN quantum well lasers


    Beteiligte:
    Jeng-Ya Yeh, (Autor:in) / Tansu, N. (Autor:in) / Mawst, L.J. (Autor:in)


    Erscheinungsdatum :

    2003-01-01


    Format / Umfang :

    146455 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    Temperature Sensitivity of 1360-nm InGaAsN Quantum Well Lasers

    IEEE | British Library Conference Proceedings | 2003


    Carrier confinement in 1300-nm InGaAsN quantum-well lasers

    Tansu, N. / Yeh, J.-Y. / Mawst, L.J. | IEEE | 2003


    The effect of nitrogen in InGaAsN quantum well lasers

    Palmer, D.J. / Smowton, P.M. / Blood, P. et al. | IEEE | 2004


    Carrier transport and injection efficiency of InGaAsN quantum-well lasers

    Jeng-Ya Yeh, / Mawst, L.J. / Tansu, N. | IEEE | 2004


    Room-temperature pulsed operation of InGaAsN quantum dot lasers

    Gao, Q. / Buda, M. / Tan, H.H. et al. | IEEE | 2004