Theoretical and experimental analysis of carrier transport in high-performance 1300-nm InGaAsN QW lasers, indicate significant thermionic hole leakage. Experimental optimization of the InGaAsN QW lasers by suppressing the carrier leakage, results in an extremely-low threshold current density of only 440 A/cm/sup 2/ at temperatures of 90/spl deg/C.


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    Titel :

    Carrier confinement in 1300-nm InGaAsN quantum-well lasers


    Beteiligte:
    Tansu, N. (Autor:in) / Yeh, J.-Y. (Autor:in) / Mawst, L.J. (Autor:in)


    Erscheinungsdatum :

    01.01.2003


    Format / Umfang :

    179915 byte



    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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