Femtosecond carrier dynamics in InGaAsN single quantum well were studied for the first time. Pump-probe measurement shows the enhanced free carrier absorption due to highly excited carriers with a delayed carrier cooling time around 2/spl sim/3.7ps.


    Zugriff

    Zugriff prüfen

    Verfügbarkeit in meiner Bibliothek prüfen

    Bestellung bei Subito €


    Exportieren, teilen und zitieren



    Titel :

    Femtosecond carrier dynamics in InGaAsN single quantum well


    Beteiligte:
    Chia-Lung Hsieh, (Autor:in) / Tzu-Ming Liu, (Autor:in) / Ming-Chun Tien, (Autor:in) / Chi-Kuang Sun, (Autor:in) / Li-Wei Sung, (Autor:in) / Hao-Hsiung Lin, (Autor:in)


    Erscheinungsdatum :

    01.01.2003


    Format / Umfang :

    76465 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    Femtosencond carrier dynamics in InGaAsN single quantum well

    Hsieh, C.-L. / Liu, T.-M. / Tien, M.-C. et al. | British Library Conference Proceedings | 2003


    Carrier confinement in 1300-nm InGaAsN quantum-well lasers

    Tansu, N. / Yeh, J.-Y. / Mawst, L.J. | IEEE | 2003


    Carrier transport and injection efficiency of InGaAsN quantum-well lasers

    Jeng-Ya Yeh, / Mawst, L.J. / Tansu, N. | IEEE | 2004


    Carrier Transport and Injection Efficiency of InGaAsN Quantum-Well Lasers

    Lasers and Electro-optics Society (Institute of Electrical and Electronics Engineers) | British Library Conference Proceedings | 2004


    Investigation of the carrier dynamics of strain compensated InGaAsN quantum wells

    Lifang Xu, / Patel, D. / Vaschenko, G. et al. | IEEE | 2005