Femtosecond carrier dynamics in InGaAsN single quantum well were studied for the first time. Pump-probe measurement shows the enhanced free carrier absorption due to highly excited carriers with a delayed carrier cooling time around 2/spl sim/3.7ps.
Femtosecond carrier dynamics in InGaAsN single quantum well
01.01.2003
76465 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Femtosencond carrier dynamics in InGaAsN single quantum well
British Library Conference Proceedings | 2003
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British Library Conference Proceedings | 2004
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