InGaAsN lasers with asymmetrically placed active region were fabricated and characterized. By moving the QW closer to p-cladding layer, reduced hole transport time in separate confinement heterostructure (SCH) results in lower threshold current, higher injection efficiency and its characteristic temperature. The experimental results agrees well with calculation.


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    Titel :

    Carrier transport and injection efficiency of InGaAsN quantum-well lasers


    Beteiligte:
    Jeng-Ya Yeh, (Autor:in) / Mawst, L.J. (Autor:in) / Tansu, N. (Autor:in)


    Erscheinungsdatum :

    01.01.2004


    Format / Umfang :

    123480 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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