InGaAsN lasers with asymmetrically placed active region were fabricated and characterized. By moving the QW closer to p-cladding layer, reduced hole transport time in separate confinement heterostructure (SCH) results in lower threshold current, higher injection efficiency and its characteristic temperature. The experimental results agrees well with calculation.
Carrier transport and injection efficiency of InGaAsN quantum-well lasers
2004-01-01
123480 byte
Conference paper
Electronic Resource
English
Carrier Transport and Injection Efficiency of InGaAsN Quantum-Well Lasers
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