InGaAsN lasers with asymmetrically placed active region were fabricated and characterized. By moving the QW closer to p-cladding layer, reduced hole transport time in separate confinement heterostructure (SCH) results in lower threshold current, higher injection efficiency and its characteristic temperature. The experimental results agrees well with calculation.


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    Title :

    Carrier transport and injection efficiency of InGaAsN quantum-well lasers


    Contributors:
    Jeng-Ya Yeh, (author) / Mawst, L.J. (author) / Tansu, N. (author)


    Publication date :

    2004-01-01


    Size :

    123480 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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