We compare the gain and radiative efficiency characteristics of an InGaAsN and InGaAs laser structures where the devices are identical except for the nitrogen content and emission wavelength.


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    Title :

    The effect of nitrogen in InGaAsN quantum well lasers


    Contributors:
    Palmer, D.J. (author) / Smowton, P.M. (author) / Blood, P. (author) / Jeng-Ya Yeh, (author) / Mawst, L.J. (author) / Tansu, N. (author)


    Publication date :

    2004-01-01


    Size :

    164927 byte



    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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