We compare the gain and radiative efficiency characteristics of an InGaAsN and InGaAs laser structures where the devices are identical except for the nitrogen content and emission wavelength.
The effect of nitrogen in InGaAsN quantum well lasers
Conference on Lasers and Electro-Optics, 2004. (CLEO). ; 1 ; 2 pp. vol.1
2004-01-01
164927 byte
Conference paper
Electronic Resource
English
Temperature Sensitivity of 1360-nm InGaAsN Quantum Well Lasers
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British Library Conference Proceedings | 2004
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