Gain, loss and /spl alpha/-factor were measured in broad stripe 1.23 /spl mu/m InGaAs and 1.29 /spl mu/m InGaAsN single-QW lasers. Experiment shows that both differential gain with respect to current and /spl alpha/-factor tend to decrease in dilute-nitride devices compared with InGaAs-active lasers.


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    Title :

    Linewidth-enhancement factors of InGaAs and InGaAsN single-quantum-well diode lasers


    Contributors:
    Shterengas, L. (author) / Jeng-Ya Yeh, (author) / Mawst, L.J. (author) / Tansu, N. (author) / Belenky, G. (author)


    Publication date :

    2004-01-01


    Size :

    202649 byte



    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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