Heavily silicon doped lattice matched InGaAIAs/lnP epilayers grown by molecular beam epitaxy
1995-01-01
294472 byte
Conference paper
Electronic Resource
English
Infrared photoluminescence of InAs/GaAs epilayers grown by molecular beam epitaxy [4454-36]
British Library Conference Proceedings | 2001
|British Library Conference Proceedings | 2000
|Silicon Holder For Molecular-Beam Epitaxy
NTRS | 1993
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