Simple assembly of silicon wafers holds silicon-based charge-coupled device (CCD) during postprocessing in which silicon deposited by molecular-beam epitaxy. Attains temperatures similar to CCD, so hotspots suppressed. Coefficients of thermal expansion of holder and CCD equal, so thermal stresses caused by differential thermal expansion and contraction do not develop. Holder readily fabricated, by standard silicon processing techniques, to accommodate various CCD geometries. Silicon does not contaminate CCD or molecular-beam-epitaxy vacuum chamber.
Silicon Holder For Molecular-Beam Epitaxy
NASA Tech Briefs ; 17 , 9
1993-09-01
Miscellaneous
No indication
English
Molecular-Beam-Epitaxy Program
NTRS | 1988
|Molecular-beam epitaxy in space
Tema Archive | 1977
|Molecular-Beam Epitaxy Of IrSi3
NTRS | 1991
|Molecular Beam Epitaxy: A Production Tool
IEEE | 1991
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