Molecular-beam epitaxy (MBE) is a descriptive term used to indicate the process by which high-quality semiconuctor films are grown by the interaction of atomic or molecular beams with a suitable substrate surface contained in a UHV environment. The process in its present form was first used to grow epitaxial layers of GaAs with beams of As2 and Ga incident on an atomically clean GaAs substrate surface.


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    Title :

    Molecular-beam epitaxy in space


    Additional title:

    Epitaxie von Halbleiterduennschichten mit einem Molekularstrahl im Weltraum


    Contributors:

    Published in:

    Publication date :

    1977


    Size :

    2 Seiten, 14 Quellen



    Type of media :

    Article (Journal)


    Type of material :

    Print


    Language :

    English




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