Molecular-beam epitaxy (MBE) is a descriptive term used to indicate the process by which high-quality semiconuctor films are grown by the interaction of atomic or molecular beams with a suitable substrate surface contained in a UHV environment. The process in its present form was first used to grow epitaxial layers of GaAs with beams of As2 and Ga incident on an atomically clean GaAs substrate surface.
Molecular-beam epitaxy in space
Epitaxie von Halbleiterduennschichten mit einem Molekularstrahl im Weltraum
Journal of Vacuum Science and Technology ; 14 , 6 ; 1283-1284
1977
2 Seiten, 14 Quellen
Aufsatz (Zeitschrift)
Englisch
RAUMFAHRZEUG , EPITAXIE , DUENNE SCHICHT , MOLEKULARSTRAHL , GALLIUMARSENID , ARSEN , GALLIUM , WELTRAUM
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