Crystalline layers grown in commercial apparatus. Experiments show CrSi2 grown on (111) face of single-crystal Si substrate by molecular-beam epitaxy. Epitaxial CrSi2 produced thus far not in desired single-crystal form. Because CrSi2 semiconductor with band gap of 0.3 eV, experimental process potential for monolitic integration of microelectronic devices based on CrSi2 (e.g., infrared detectors) with signal-processing circuitry based on Si.


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    Titel :

    Molecular-Beam Epitaxy Of CrSi2 on Si(111)


    Beteiligte:

    Erschienen in:

    Erscheinungsdatum :

    1989-06-01



    Medientyp :

    Sonstige


    Format :

    Keine Angabe


    Sprache :

    Englisch


    Schlagwörter :


    Molecular-Beam-Epitaxy Program

    Sparks, Patricia D. | NTRS | 1988



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    Molecular-beam epitaxy in space

    Arthur, J.R. | Tema Archiv | 1977


    Silicon Holder For Molecular-Beam Epitaxy

    Hoenk, Michael E. / Grunthaner, Paula J. / Grunthaner, Frank J. | NTRS | 1993