Molecular Beam Epitaxy (MBE) computer program developed to aid in design of single- and double-junction cascade cells made of silicon. Cascade cell has efficiency 1 or 2 percent higher than single cell, with twice the open-circuit voltage. Input parameters include doping density, diffusion lengths, thicknesses of regions, solar spectrum, absorption coefficients of silicon (data included for 101 wavelengths), and surface recombination velocities. Results include maximum power, short-circuit current, and open-circuit voltage. Program written in FORTRAN IV.
Molecular-Beam-Epitaxy Program
NASA Tech Briefs ; 12 , 4
1988-04-01
Miscellaneous
No indication
English
Molecular-Beam Epitaxy Of IrSi3
NTRS | 1991
|Molecular-beam epitaxy in space
Tema Archive | 1977
|Silicon Holder For Molecular-Beam Epitaxy
NTRS | 1993
|Molecular Beam Epitaxy: A Production Tool
IEEE | 1991
|Delayed Shutters For Dual-Beam Molecular Epitaxy
NTRS | 1989
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