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    Title :

    Metastable photoluminescence in heavily Mg-doped GaN grown by metalorganic chemical vapor phase epitaxy [4078-75]


    Contributors:

    Conference:

    Conference; 2nd, Optoelectronic materials and devices ; 2000 ; Taipei



    Publication date :

    2000-01-01


    Size :

    6 pages




    Type of media :

    Conference paper


    Type of material :

    Print


    Language :

    English




    Phase calculation of (100) oriented InGaAsP grown with liquid phase epitaxy [4078-27]

    Zhu, J. / Mao, X. / Chan, Y.-C. et al. | British Library Conference Proceedings | 2000


    New concept technology: pressure-variation liquid phase epitaxy [4078-28]

    Mao, X. / Chan, Y.-C. / Lam, Y.-L. et al. | British Library Conference Proceedings | 2000


    Infrared reflectance study of chemical-vapor-deposition-grown 3C-silicon carbide on silicon substrate [4078-29]

    Chang, W. Y. / Feng, Z. C. / Chua, S. J. et al. | British Library Conference Proceedings | 2000


    Nr. 4078

    DataCite | 1923


    InAs Quantum Dots on InP(100) Grown by Metalorganic Vapor-Phase Epitaxy

    IEEE | British Library Conference Proceedings | 2003