High-quality GeSn alloys were grown on Ge-buffered Si substrates and a Ge0.97Sn0.03 alloy was successfully used to fabricate photodetectors. The GeSn photodiodes have relatively high responsivities in all telecommunication bands.
GeSn on Si photodetectors grown by molecular beam epitaxy
2011-09-01
217230 byte
Conference paper
Electronic Resource
English
British Library Conference Proceedings | 2013
|Photoluminescence properties of CuInSe2 grown by molecular beam epitaxy
Online Contents | 1995
|Raman Scattering from GaAs Nanowires Grown by Molecular Beam Epitaxy
British Library Conference Proceedings | 2008
|