High-quality GeSn alloys were grown on Ge-buffered Si substrates and a Ge0.97Sn0.03 alloy was successfully used to fabricate photodetectors. The GeSn photodiodes have relatively high responsivities in all telecommunication bands.


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    Title :

    GeSn on Si photodetectors grown by molecular beam epitaxy


    Contributors:
    Su, S. J. (author) / Xue, C. L. (author) / Cheng, B. W. (author) / Wang, W. (author) / Zhang, G. Z. (author) / Zuo, Y. H. (author) / Wang, Q. M. (author)


    Publication date :

    2011-09-01


    Size :

    217230 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English




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