High-quality GeSn alloys were grown on Ge-buffered Si substrates and a Ge0.97Sn0.03 alloy was successfully used to fabricate photodetectors. The GeSn photodiodes have relatively high responsivities in all telecommunication bands.


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    Titel :

    GeSn on Si photodetectors grown by molecular beam epitaxy


    Beteiligte:
    Su, S. J. (Autor:in) / Xue, C. L. (Autor:in) / Cheng, B. W. (Autor:in) / Wang, W. (Autor:in) / Zhang, G. Z. (Autor:in) / Zuo, Y. H. (Autor:in) / Wang, Q. M. (Autor:in)


    Erscheinungsdatum :

    01.09.2011


    Format / Umfang :

    217230 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch




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