High-quality GeSn alloys were grown on Ge-buffered Si substrates and a Ge0.97Sn0.03 alloy was successfully used to fabricate photodetectors. The GeSn photodiodes have relatively high responsivities in all telecommunication bands.
GeSn on Si photodetectors grown by molecular beam epitaxy
01.09.2011
217230 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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