Heavily silicon doped lattice matched InGaAIAs/lnP epilayers grown by molecular beam epitaxy
01.01.1995
294472 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Infrared photoluminescence of InAs/GaAs epilayers grown by molecular beam epitaxy [4454-36]
British Library Conference Proceedings | 2001
|British Library Conference Proceedings | 2000
|Silicon Holder For Molecular-Beam Epitaxy
NTRS | 1993
|Photoluminescence properties of CuInSe2 grown by molecular beam epitaxy
Online Contents | 1995
|