This paper reports the results of low-temperature flip-chip bonding of a vertical cavity surface emitting laser (YCSEL) on a micromachined Si substrate. Low temperature bonding was achieved by introducing surface activation by plasma irradiation into the flip-chip bonding process. After the surfaces of the Au electrodes of the VCSEL and Si substrate were cleaned using an Ar radio frequency (RF) plasma, Au-Au bonding was carried out only by contact in ambient air. At a bonding temperature of 100 /spl deg/C, the die-shear strength exceeded the failure criteria of MIL-STD-883.


    Access

    Check access

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    Low-temperature direct flip-chip bonding for integrated micro-systems


    Contributors:
    Higurashi, E. (author) / Suga, T. (author) / Sawada, R. (author)


    Publication date :

    2005-01-01


    Size :

    269020 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    Low-Temperature Direct Flip-Chip Bonding for Integrated Micro-Systems

    IEEE Lasers and Electro-optics Society | British Library Conference Proceedings | 2005


    Flip-chip bonding of high-speed laser diodes

    Lindgren, S. / Ahlfeldt, H. / Kerzar, B. et al. | IEEE | 1996


    Flip-Chip Bonding of High-Speed Laser Diodes

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1996


    Flip chip electrical interconnection by selective electroplating and bonding

    Pan, L.-W. / Yuen, P. / Lin, L. et al. | British Library Online Contents | 2003