This paper reports the results of low-temperature flip-chip bonding of a vertical cavity surface emitting laser (YCSEL) on a micromachined Si substrate. Low temperature bonding was achieved by introducing surface activation by plasma irradiation into the flip-chip bonding process. After the surfaces of the Au electrodes of the VCSEL and Si substrate were cleaned using an Ar radio frequency (RF) plasma, Au-Au bonding was carried out only by contact in ambient air. At a bonding temperature of 100 /spl deg/C, the die-shear strength exceeded the failure criteria of MIL-STD-883.
Low-temperature direct flip-chip bonding for integrated micro-systems
2005-01-01
269020 byte
Conference paper
Electronic Resource
English
Low-Temperature Direct Flip-Chip Bonding for Integrated Micro-Systems
British Library Conference Proceedings | 2005
|Flip-chip bonding of high-speed laser diodes
IEEE | 1996
|Flip-Chip Bonding of High-Speed Laser Diodes
British Library Conference Proceedings | 1996
|Flip chip electrical interconnection by selective electroplating and bonding
British Library Online Contents | 2003
|