This paper reports the results of low-temperature flip-chip bonding of a vertical cavity surface emitting laser (YCSEL) on a micromachined Si substrate. Low temperature bonding was achieved by introducing surface activation by plasma irradiation into the flip-chip bonding process. After the surfaces of the Au electrodes of the VCSEL and Si substrate were cleaned using an Ar radio frequency (RF) plasma, Au-Au bonding was carried out only by contact in ambient air. At a bonding temperature of 100 /spl deg/C, the die-shear strength exceeded the failure criteria of MIL-STD-883.


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    Titel :

    Low-temperature direct flip-chip bonding for integrated micro-systems


    Beteiligte:
    Higurashi, E. (Autor:in) / Suga, T. (Autor:in) / Sawada, R. (Autor:in)


    Erscheinungsdatum :

    01.01.2005


    Format / Umfang :

    269020 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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