Charge transport and luminescence in InGaN-based short-wavelength light-emitting diodes feature some anomalies: 1) low-temperature quenching of luminescence yield; 2) very large ideality factor of I-V curves. These observations are explained in terms of electron ballistic overflow and injection-induced conductivity on p-side.


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    Title :

    InGaN-based quantum-well LEDs: explanation of anomalous electro-optical characteristics


    Contributors:
    Eliseev, P.G. (author) / Lee, J. (author) / Osinski, M. (author)


    Publication date :

    2005-01-01


    Size :

    433485 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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