Charge transport and luminescence in InGaN-based short-wavelength light-emitting diodes feature some anomalies: 1) low-temperature quenching of luminescence yield; 2) very large ideality factor of I-V curves. These observations are explained in terms of electron ballistic overflow and injection-induced conductivity on p-side.
InGaN-based quantum-well LEDs: explanation of anomalous electro-optical characteristics
(CLEO). Conference on Lasers and Electro-Optics, 2005. ; 1 ; 147-149 Vol. 1
2005-01-01
433485 byte
Conference paper
Electronic Resource
English
InGaN-Based Quantum-Well LEDs: Explanation of Anomalous Electro-Optical Characteristics
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