Charge transport and luminescence in InGaN-based short-wavelength light-emitting diodes feature some anomalies: 1) low-temperature quenching of luminescence yield; 2) very large ideality factor of I-V curves. These observations are explained in terms of electron ballistic overflow and injection-induced conductivity on p-side.


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    Titel :

    InGaN-based quantum-well LEDs: explanation of anomalous electro-optical characteristics


    Beteiligte:
    Eliseev, P.G. (Autor:in) / Lee, J. (Autor:in) / Osinski, M. (Autor:in)


    Erscheinungsdatum :

    01.01.2005


    Format / Umfang :

    433485 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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