Luminescence efficiency of ultraviolet light-emitting diodes (UV-LEDs) is investigated using electroluminescence measurements. The effects of thermal and layer structure on the external quantum efficiency at different current densities are discussed and clarified.
Luminescence efficiency of InGaN-based multiple quantum well UV-LEDS
2003-01-01
43664 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Luminescence efficiency of InGaN-based multiple quantum well UV-LEDS
British Library Conference Proceedings | 2003
|Growth of InGaN Quantum Wells and InGaN/GaN Quantum Well LEDs by MOCVD
British Library Conference Proceedings | 1996
|InGaN-Based Quantum-Well LEDs: Explanation of Anomalous Electro-Optical Characteristics
British Library Conference Proceedings | 2005
|