Luminescence efficiency of ultraviolet light-emitting diodes (UV-LEDs) is investigated using electroluminescence measurements. The effects of thermal and layer structure on the external quantum efficiency at different current densities are discussed and clarified.


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    Title :

    Luminescence efficiency of InGaN-based multiple quantum well UV-LEDS


    Contributors:


    Publication date :

    2003-01-01


    Size :

    43664 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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