InGaN quantum wells (QWs) and InGaN/GaN LED structures were grown by atmospheric pressure MOCVD on c-plane sapphire using the precursors trimethylgallium (TMGa), trimethylindium (TMIn), trimethylaluminum (TMAl) and ammonia. Si/sub 2/H/sub 6/ and cyclopentadienylmagnesium (Cp/sub 2/Mg) were used as n- and p-type dopants, respectively. GaN growth was performed at 1080/spl deg/C, the InGaN layers were deposited at temperatures between 700 and 830/spl deg/C. InGaN QWs with an indium content up to 25 % were implemented in double heterostructure LEDs. The devices showed blue luminescence visible in bright room light. The current-voltage characteristics of the double heterostructure LEDs exhibited a forward voltage of 3.6 V at 20 mA.


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    Title :

    Growth of InGaN quantum wells and InGaN/GaN quantum well LEDs by MOCVD


    Contributors:
    Keller, S. (author) / Mishra, U.K. (author) / DenBaars, S.P. (author)


    Publication date :

    1996-01-01


    Size :

    72283 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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