Access

    Access via TIB

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    Growth of InGaN Quantum Wells and InGaN/GaN Quantum Well LEDs by MOCVD



    Conference:

    Annual meeting; 9th, IEEE: Lasers and Electro-Optics Society; LEOS '96 ; 1996 ; Boston; MA



    Publication date :

    1996-01-01


    Size :

    255 pages


    Remarks:

    Described as proceedings. IEEE cat no: 96CH35895



    Type of media :

    Conference paper


    Type of material :

    Print


    Language :

    English




    Growth of InGaN quantum wells and InGaN/GaN quantum well LEDs by MOCVD

    Keller, S. / Mishra, U.K. / DenBaars, S.P. | IEEE | 1996


    Luminescence efficiency of InGaN-based multiple quantum well UV-LEDS

    Chang-Chi Pan, / Chia-Ming Lee, / Wen-Jay Hsu, et al. | IEEE | 2003


    Luminescence efficiency of InGaN-based multiple quantum well UV-LEDS

    Pan, C.-C. / Lee, C.-M. / Hsu, W.-J. et al. | British Library Conference Proceedings | 2003


    Accurate modelling of InGaN quantum wells

    Wenzel, H. | British Library Online Contents | 2006


    Atomistic simulation of InGaN/GaN quantum disk LEDs

    Lopez, M. / Sacconi, F. / Auf der Maur, M. et al. | British Library Online Contents | 2012