Growth of InGaN Quantum Wells and InGaN/GaN Quantum Well LEDs by MOCVD
Annual meeting; 9th, IEEE: Lasers and Electro-Optics Society; LEOS '96 ; 1996 ; Boston; MA
01.01.1996
255 pages
Described as proceedings. IEEE cat no: 96CH35895
Aufsatz (Konferenz)
Englisch
LEOS , lasers , IEEE , electro-optics
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