A polarization state shifting method is applied for determining the thickness of SiO2 thin film on Si substrate. The ellipsometric parameters are obtained by the image frames under different polarization modification of reflected beam.


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    Title :

    Polarization Shifting Technique in Interferometric Ellipsometer for Two-Dimensional Characterization of Silicon Wafer


    Contributors:


    Publication date :

    2005-01-01


    Size :

    210009 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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