A polarization state shifting method is applied for determining the thickness of SiO2 thin film on Si substrate. The ellipsometric parameters are obtained by the image frames under different polarization modification of reflected beam.
Polarization Shifting Technique in Interferometric Ellipsometer for Two-Dimensional Characterization of Silicon Wafer
2005-01-01
210009 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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