Access

    Access via TIB

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    Effect of interfacial SiO2 thickness for low temperature O2 plasma activated wafer bonding


    Contributors:
    Olbrechts, B. (author) / Zhang, X. (author) / Bertholet, Y. (author) / Pardoen, T. (author) / Raskin, J. P. (author)

    Published in:

    MICROSYSTEM TECHNOLOGIES ; 12 , 5 ; 383-390


    Publication date :

    2006-01-01


    Size :

    8 pages



    Type of media :

    Article (Journal)


    Type of material :

    Print


    Language :

    English


    Classification :

    DDC:    629.83



    Wafer-level plasma activated bonding: new technology for MEMS fabrication

    Dragoi, V. / Mittendorfer, G. / Thanner, C. et al. | British Library Online Contents | 2008


    Wafer direct bonding with ambient pressure plasma activation

    Gabriel, M. / Johnson, B. / Suss, R. et al. | British Library Online Contents | 2006


    Wafer bonding using Cu–Sn intermetallic bonding layers

    Flötgen, C. / Pawlak, M. / Pabo, E. et al. | British Library Online Contents | 2014


    Surface activation using remote plasma for silicon to quartz wafer bonding

    Belford, R. E. / Sood, S. | British Library Online Contents | 2009


    Enhanced Fiber Grating Coupler Integrated by Wafer-to-Wafer Bonding

    Kopp, C. / Augendre, E. / Orobtchouk, R. et al. | British Library Online Contents | 2011