Material microanalyses of InGaN/GaN quantum well structures revealed better confinement of indium-aggregated clusters within wells in samples of lower indium contents and indium-rich precipitates aggregating near V-shape defects.


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    Titel :

    Microstructure studies of InGaN/GaN multiple quantum wells


    Beteiligte:
    Yen-Sheng Lin, (Autor:in) / Chen Hsu, (Autor:in) / Kung-Jeng Ma, (Autor:in) / Shih-Wei Feng, (Autor:in) / Yung-Chen Cheng, (Autor:in) / Yi-Yin Chung, (Autor:in) / Chih-Wei Liu, (Autor:in) / Yang, C.C. (Autor:in) / Jen-Inn Chyi, (Autor:in)


    Erscheinungsdatum :

    2001-01-01


    Format / Umfang :

    314524 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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