Material microanalyses of InGaN/GaN quantum well structures revealed better confinement of indium-aggregated clusters within wells in samples of lower indium contents and indium-rich precipitates aggregating near V-shape defects.
Microstructure studies of InGaN/GaN multiple quantum wells
2001-01-01
314524 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Microstructure Studies of InGaN/GaN Multiple Quantum Wells
British Library Conference Proceedings | 2001
|Accurate modelling of InGaN quantum wells
British Library Online Contents | 2006
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