X-ray diffraction, transmission electron microscopy and Rutherford backscattering/channeling are used to characterize the structure of an InGaN/GaN multiple quantum well (MQW) grown on an Al/sub 2/O/sub 3/(0001) substrate. Using the combination of these measurements, not only the layered structure of the MQW is revealed clearly but also the In content x (0.16) of the In/sub x/Ga/sub 1-/N component can be determined reliably, which is a prerequisite for further determination of the elastic strain of the MQW. X-ray /spl theta/-2/spl theta/ scans of the (0002) and (101~4) diffractions are used to determine the average lattice parameters and of the MQW, consequently the average parallel elastic strain = -0.25% and the average perpendicular elastic strain = +0.13% of the MQW are deduced. The experimental result of / = -0.52 is in good agreement with the value deduced from the elastic constants.


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    Titel :

    Structural characterization and elastic strain of InGaN/GaN multiple quantum wells


    Beteiligte:
    Wu, M.F. (Autor:in) / Shengqiang Zhou, (Autor:in) / Shude Yao, (Autor:in) / Yang, Z.J. (Autor:in) / Tong, Y.Z. (Autor:in) / Yu, T.J. (Autor:in) / Zhang, G.Y. (Autor:in)


    Erscheinungsdatum :

    2003-01-01


    Format / Umfang :

    346951 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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