We have used femtosecond spectroscopy to determine the electron capture times of blue-emitting InGaN/GaN quantum well laser structures. We confirm theoretical predications that the capture time depends on both the temperature and carrier density.
Electron capture time in InGaN/GaN multiple quantum wells
Conference on Lasers and Electro-Optics, 2004. (CLEO). ; 2 ; 2 pp. vol.2
2004-01-01
95688 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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