We have used femtosecond spectroscopy to determine the electron capture times of blue-emitting InGaN/GaN quantum well laser structures. We confirm theoretical predications that the capture time depends on both the temperature and carrier density.


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    Title :

    Electron capture time in InGaN/GaN multiple quantum wells


    Contributors:
    Fan, W.H. (author) / Olaizola, S.M. (author) / Wells, J.-P.R. (author) / Mowbray, D.J. (author) / Skolnick, M.S. (author) / Fox, A.M. (author) / Wang, T. (author) / Parbrook, P.J. (author)


    Publication date :

    2004-01-01


    Size :

    95688 byte



    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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