We have used femtosecond spectroscopy to determine the electron capture times of blue-emitting InGaN/GaN quantum well laser structures. We confirm theoretical predications that the capture time depends on both the temperature and carrier density.
Electron capture time in InGaN/GaN multiple quantum wells
Conference on Lasers and Electro-Optics, 2004. (CLEO). ; 2 ; 2 pp. vol.2
2004-01-01
95688 byte
Conference paper
Electronic Resource
English
Microstructure Studies of InGaN/GaN Multiple Quantum Wells
British Library Conference Proceedings | 2001
|Accurate modelling of InGaN quantum wells
British Library Online Contents | 2006
|Structural Characterization and Elastic Strain of InGaN/GaN Multiple Quantum Wells
British Library Conference Proceedings | 2003
|