Material microanalyses of InGaN/GaN quantum well structures revealed better confinement of indium-aggregated clusters within wells in samples of lower indium contents and indium-rich precipitates aggregating near V-shape defects.
Microstructure studies of InGaN/GaN multiple quantum wells
2001-01-01
314524 byte
Conference paper
Electronic Resource
English
Microstructure Studies of InGaN/GaN Multiple Quantum Wells
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