Material microanalyses of InGaN/GaN quantum well structures revealed better confinement of indium-aggregated clusters within wells in samples of lower indium contents and indium-rich precipitates aggregating near V-shape defects.


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    Title :

    Microstructure studies of InGaN/GaN multiple quantum wells


    Contributors:
    Yen-Sheng Lin, (author) / Chen Hsu, (author) / Kung-Jeng Ma, (author) / Shih-Wei Feng, (author) / Yung-Chen Cheng, (author) / Yi-Yin Chung, (author) / Chih-Wei Liu, (author) / Yang, C.C. (author) / Jen-Inn Chyi, (author)


    Publication date :

    2001-01-01


    Size :

    314524 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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