Highly reliable 808-nm laser diodes with AlInGaAs strained quantum well grown by MOCVD [2886-505]
Conference, Semiconductor lasers II ; 1996 ; Beijing
1996-01-01
9 pages
Aufsatz (Konferenz)
Englisch
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AlInGaAs/AlGaAs strained material and strained quantum well lasers grown by MBE [2886-553]
British Library Conference Proceedings | 1996
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British Library Conference Proceedings | 1996
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British Library Conference Proceedings | 1996
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