With post-growth rapid thermal annealing (RTA), 818 nm strained Al/sub 0.15/In/sub 0.25/Ga/sub 0.6/As multiquantum-well (MQW) lasers grown by solid source molecular beam epitaxy (MBE) showed a record low threshold current density of 83 A/cm/sup 2/ per well. Ridge waveguide lasers fabricated from the same material exhibited pulsed threshold current of 5 mA with 62% differential quantum efficiency.
Low threshold MBE-grown AlInGaAs-AlGaAs strained multiquantum-well lasers by rapid thermal annealing
1996-01-01
196955 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Low Threshold MBE-grown AlInGaAs/AlGaAs Strained Multiquantum-well Lasers by Rapid Thermal Annealing
British Library Conference Proceedings | 1996
|AlInGaAs/AlGaAs strained material and strained quantum well lasers grown by MBE [2886-553]
British Library Conference Proceedings | 1996
|British Library Conference Proceedings | 1996
|British Library Conference Proceedings | 1997
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