With post-growth rapid thermal annealing (RTA), 818 nm strained Al/sub 0.15/In/sub 0.25/Ga/sub 0.6/As multiquantum-well (MQW) lasers grown by solid source molecular beam epitaxy (MBE) showed a record low threshold current density of 83 A/cm/sup 2/ per well. Ridge waveguide lasers fabricated from the same material exhibited pulsed threshold current of 5 mA with 62% differential quantum efficiency.


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    Titel :

    Low threshold MBE-grown AlInGaAs-AlGaAs strained multiquantum-well lasers by rapid thermal annealing


    Beteiligte:
    Ko, J. (Autor:in) / Ching-Hui Chen, (Autor:in) / Coldren, L.A. (Autor:in) / Hu, E.L. (Autor:in)


    Erscheinungsdatum :

    1996-01-01


    Format / Umfang :

    196955 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1996


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    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1996



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