In conclusion, we demonstrated room temperature CW operation of MBE-grown strained AlInGaAs-AlGaAs top-emitting VCLs. We have obtained a low CW threshold current of 1.3 mA for a 7 /spl mu/m/spl times/7 /spl mu/m device without post-growth annealing. In addition, a high output power of 5.5 mW with 51% differential quantum efficiency was obtained from an 11 /spl mu/m/spl times/11 /spl mu/m device.


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    Titel :

    MBE-grown strained AlInGaAs/AlGaAs vertical cavity lasers with low threshold currents and high output power


    Beteiligte:
    Ko, J. (Autor:in) / Thibeault, B.J. (Autor:in) / Akulova, Y. (Autor:in) / Hegblom, E.R. (Autor:in) / Young, B.D. (Autor:in) / Coldren, L.A. (Autor:in)


    Erscheinungsdatum :

    1996-01-01


    Format / Umfang :

    193918 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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