In conclusion, we demonstrated room temperature CW operation of MBE-grown strained AlInGaAs-AlGaAs top-emitting VCLs. We have obtained a low CW threshold current of 1.3 mA for a 7 /spl mu/m/spl times/7 /spl mu/m device without post-growth annealing. In addition, a high output power of 5.5 mW with 51% differential quantum efficiency was obtained from an 11 /spl mu/m/spl times/11 /spl mu/m device.
MBE-grown strained AlInGaAs/AlGaAs vertical cavity lasers with low threshold currents and high output power
1996-01-01
193918 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
British Library Conference Proceedings | 1996
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British Library Conference Proceedings | 1996
|AlInGaAs/AlGaAs strained material and strained quantum well lasers grown by MBE [2886-553]
British Library Conference Proceedings | 1996
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