With post-growth rapid thermal annealing (RTA), 818 nm strained Al/sub 0.15/In/sub 0.25/Ga/sub 0.6/As multiquantum-well (MQW) lasers grown by solid source molecular beam epitaxy (MBE) showed a record low threshold current density of 83 A/cm/sup 2/ per well. Ridge waveguide lasers fabricated from the same material exhibited pulsed threshold current of 5 mA with 62% differential quantum efficiency.


    Access

    Check access

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    Low threshold MBE-grown AlInGaAs-AlGaAs strained multiquantum-well lasers by rapid thermal annealing


    Contributors:
    Ko, J. (author) / Ching-Hui Chen (author) / Coldren, L.A. (author) / Hu, E.L. (author)


    Publication date :

    1996-01-01


    Size :

    196955 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    Low Threshold MBE-grown AlInGaAs/AlGaAs Strained Multiquantum-well Lasers by Rapid Thermal Annealing

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1996


    AlInGaAs/AlGaAs Strained Single-quantum-well Diode Lasers

    Wang, C.A. / Walpole, J.N. / Missaggia, L.J. et al. | IEEE | 1990


    AlInGaAs/AlGaAs strained material and strained quantum well lasers grown by MBE [2886-553]

    Xu, Z.-T. / Yang, G.-W. / Xu, J.-Y. et al. | British Library Conference Proceedings | 1996


    MBE-Grown Strained AlInGaAs/AlGaAs Vertical Cavity Lasers with Low Threshold Currents and High Output Power

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1996