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    Titel :

    High-power 980-nm strained InGaAs/AlGaAs/GaAs quantum well laser [2886-570]



    Kongress:

    Conference, Semiconductor lasers II ; 1996 ; Beijing



    Erscheinungsdatum :

    1996-01-01


    Format / Umfang :

    7 pages




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Print


    Sprache :

    Englisch




    AlInGaAs/AlGaAs strained material and strained quantum well lasers grown by MBE [2886-553]

    Xu, Z.-T. / Yang, G.-W. / Xu, J.-Y. et al. | British Library Conference Proceedings | 1996


    1.48-m InGaAs/InGaAsP separated confinement strained layer multiple quantum well lasers [2886-559]

    An, H. / Yang, S. / Sun, H. et al. | British Library Conference Proceedings | 1996


    Reliability of high-power AlGaAs/GaAs QW laser diodes (Invited Paper) [2886-517]

    Dabkowski, F. P. / Pendse, D. R. / Barrett, R. J. et al. | British Library Conference Proceedings | 1996


    0.98 m Wavelength InGaAs/GaAs/AlGaAs Strained Quantum-Well Laser Diodes with High Reliability

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1997


    Interdiffusion effect on the gain of InGaAs/InP quantum well laser [2886-509]

    Chan, M. C. Y. / Chan, K. S. / Li, E. H. et al. | British Library Conference Proceedings | 1996