High-power 980-nm strained InGaAs/AlGaAs/GaAs quantum well laser [2886-570]
Conference, Semiconductor lasers II ; 1996 ; Beijing
1996-01-01
7 pages
Aufsatz (Konferenz)
Englisch
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|0.98 m Wavelength InGaAs/GaAs/AlGaAs Strained Quantum-Well Laser Diodes with High Reliability
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