High-power 980-nm strained InGaAs/AlGaAs/GaAs quantum well laser [2886-570]
Conference, Semiconductor lasers II ; 1996 ; Beijing
01.01.1996
7 pages
Aufsatz (Konferenz)
Englisch
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
AlInGaAs/AlGaAs strained material and strained quantum well lasers grown by MBE [2886-553]
British Library Conference Proceedings | 1996
|1.48-m InGaAs/InGaAsP separated confinement strained layer multiple quantum well lasers [2886-559]
British Library Conference Proceedings | 1996
|Reliability of high-power AlGaAs/GaAs QW laser diodes (Invited Paper) [2886-517]
British Library Conference Proceedings | 1996
|0.98 m Wavelength InGaAs/GaAs/AlGaAs Strained Quantum-Well Laser Diodes with High Reliability
British Library Conference Proceedings | 1997
|Temperature behavior of unstrained (GaAs/AlGaAs) and strained (InGaAs/GaAs) quantum well bandgaps
British Library Online Contents | 2015
|