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    Titel :

    1.48-m InGaAs/InGaAsP separated confinement strained layer multiple quantum well lasers [2886-559]



    Kongress:

    Conference, Semiconductor lasers II ; 1996 ; Beijing



    Erscheinungsdatum :

    01.01.1996


    Format / Umfang :

    5 pages




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Print


    Sprache :

    Englisch




    Characterization of 1.48 m High Power InGaAs/InGaAsP Multiple Quantum Well Lasers Grown by Low-Pressure MOCVD

    McCrary, V. R. / Napholtz, S. G. / Wang, K. W. et al. | British Library Conference Proceedings | 1995


    Characteristic analysis of InGaAs/InGaAsP strained quantum well lasers

    Ma, C. / Han, C. / Liu, S. | British Library Online Contents | 1997


    AlInGaAs/AlGaAs strained material and strained quantum well lasers grown by MBE [2886-553]

    Xu, Z.-T. / Yang, G.-W. / Xu, J.-Y. et al. | British Library Conference Proceedings | 1996


    Auger Recombination in Strained and Unstrained InGaAs/InGaAsP Multiple Quantum Well Lasers

    Fuchs, G. / Schiedel, C. / Hangleiter, A. et al. | British Library Conference Proceedings | 1992


    High-power 980-nm strained InGaAs/AlGaAs/GaAs quantum well laser [2886-570]

    Hua, J. / Guan, X. / SPIE-The International Society for Optical Engineering | British Library Conference Proceedings | 1996