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    Titel :

    Strained InGaAs ridge quantum wires structure grown by molecular beam epitaxy on nonplanar substrate [2886-541]



    Kongress:

    Conference, Semiconductor lasers II ; 1996 ; Beijing



    Erscheinungsdatum :

    1996-01-01


    Format / Umfang :

    5 pages




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Print


    Sprache :

    Englisch




    AlInGaAs/AlGaAs strained material and strained quantum well lasers grown by MBE [2886-553]

    Xu, Z.-T. / Yang, G.-W. / Xu, J.-Y. et al. | British Library Conference Proceedings | 1996


    High-power 980-nm strained InGaAs/AlGaAs/GaAs quantum well laser [2886-570]

    Hua, J. / Guan, X. / SPIE-The International Society for Optical Engineering | British Library Conference Proceedings | 1996


    1.48-m InGaAs/InGaAsP separated confinement strained layer multiple quantum well lasers [2886-559]

    An, H. / Yang, S. / Sun, H. et al. | British Library Conference Proceedings | 1996


    Highly reliable 808-nm laser diodes with AlInGaAs strained quantum well grown by MOCVD [2886-505]

    Zalevsky, I. D. / Bulaev, P. V. / Padalitza, A. A. et al. | British Library Conference Proceedings | 1996


    Nr. 2886

    DataCite | 1900