Strained InGaAs ridge quantum wires structure grown by molecular beam epitaxy on nonplanar substrate [2886-541]
Conference, Semiconductor lasers II ; 1996 ; Beijing
01.01.1996
5 pages
Aufsatz (Konferenz)
Englisch
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AlInGaAs/AlGaAs strained material and strained quantum well lasers grown by MBE [2886-553]
British Library Conference Proceedings | 1996
|High-power 980-nm strained InGaAs/AlGaAs/GaAs quantum well laser [2886-570]
British Library Conference Proceedings | 1996
|1.48-m InGaAs/InGaAsP separated confinement strained layer multiple quantum well lasers [2886-559]
British Library Conference Proceedings | 1996
|Highly reliable 808-nm laser diodes with AlInGaAs strained quantum well grown by MOCVD [2886-505]
British Library Conference Proceedings | 1996
|MBE growth of low-threshold-current InGaAs VCSEL structure [2886-542]
British Library Conference Proceedings | 1996
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