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    Title :

    Highly reliable 808-nm laser diodes with AlInGaAs strained quantum well grown by MOCVD [2886-505]



    Conference:

    Conference, Semiconductor lasers II ; 1996 ; Beijing



    Publication date :

    1996-01-01


    Size :

    9 pages




    Type of media :

    Conference paper


    Type of material :

    Print


    Language :

    English




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