We present heavy ion test results for a bipolar logic device of moderate complexity. Such devices require the implementation of special techniques for testing circuits of varying upset sensitivity, and unlike similar MOS devices, present problems with test data interpretation.
Heavy-ion induced single event upsets in a bipolar logic device
Schwerioneninduzierte einzelne Umkippvorgaenge in bipolaren logischen Schaltkreisen
IEEE Transactions on Nuclear Science ; 30 , 6 ; 4470-4474
1983
5 Seiten, 6 Bilder, 2 Tabellen, 11 Quellen
Article (Journal)
English
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